Field of research interests: Semiconductors, microelectronics, sensors, nanotechnologies, numerical and statistical modeling of semiconductor devices and technologies, data mining.
       Year and place of birth: 1939, Sofia.
       Education: Petar Peykov graduated from Faculty of Physics, Sofia University “St. Kl. Ohridsky” in 1966. In 1973, he obtained PhD in Physics and Mathematics from the Institute of Semiconductors, Ukrainian Academy of Sciences, Kiev, Russia.
       Publications: Over 123 scientific articles, 2 monograph, 9 Bulgarian patents and 2 in Russia.
       Career: Institute of Physics, BAS - physicist; Institute of Solid State Physics, BAS - research associate; Institute of Microelectronics, Ministry of Electronics – 1-st deputy director, senior research assistant of 2nd degree; Universidad Autуnoma de Puebla, Mexico – visiting professor; Instituto Nacional de Astrofнsica, Уptica i Electrуnica – senior researcher category “C”; SNI – researcher level II; Faculty of Physics, Sofia University – physicist.
       Teaching experience: He was lecturer more than 20 years in 8 different courses as: part – time lecturer in the Faculty of Physics, Sofia University, visiting professor in the Universidad Autуnoma de Puebla, Mexico and in the Instituto Nacional de Astrofнsica, Уptica i Electrуnica, Mexico.