C U R R I C U LUM  VITAE

 

 

 

Personal:

· Born on September 2, 1946 in Dobrich, Bulgaria, Bulgarian

· Married, two children

Education:

· 1971 M.Sc.Degree, Faculty of Physics, (Semiconductors)Sofia University

· Theses: Ph.D., 1983D.Sc., 2000

· Ph.D. in Microelectronics, Inst. of Solid State Physics, Sofia, Bulgarian Academy of Sciences

· Doctor of Sciences in Physics, Inst. of Solid. State Physics, Sofia, Bulgarian Academy of Sciences

Position:

· Professor D.Sc. at Institute of Solid State Physics., Sofia,Lab."Phys. Problems of Microelectronics" Bulgarian Academy of Science

Past activities:

· 1972 Joined Inst. of Solid State Physics, Sofia (Laboratory; “Physical Problems of Microelectronics”), Bulgarian Academy of Sci., (researcher)

· 1984-1985 Joined Inst. for Nuclear Research, Dubna, Russia, (Assoc.Prof.)

· 1988 Associate Professor at Inst. of Solid State Physics, Sofia,Bulgarian Academy of Sciences

· 1992-1999 Head of the Laboratory “Physical Problems of Microelectronics”, Inst. of Solid State Physics, Sofia, BulgarianAcad. of Sciences

· Within this period, a few months (in 1993) at Delft Inst. of Microel. andSubmicron Technol., Delft, The Netherlands, (Fellowship, Commission ofthe European Communities, Brussels)

· 1993-2003 Member and Vice president of the Physical Assessment Committee at theNational Science Foundation, Bulgaria

 

Current responsibilities:

· Leader of the research group on high-k dielectrics for nanoscale applications

· Responsible for several international research projects

· Responsible for a number of research projects in Bulgaria such as, Ta₂O₅ dielectric as high-k alternative to SiO₂ for nanoscale dynamic memories

· Member of National Research Council on Condensed Matter Physics, Bulgaria

· Member of the Editorial Board of the International Journal: “Microelectronics Reliability”.

Membership:

· Union of Bulgarian Scientists; Bulgarian Physical Society

Miscellaneous:

· Has authored or co-authored many scientific papers in International Journals and conferences, more than 160;invited papers ~25Reports at International Conferences ~ 70

· Has served in many Committees of International Conferences and Workshops

· Has served as reviewer of research proposals to Bulgarian Science Foundation,Ireland Science Foundation, NATO

· Regular reviewer for International Journals (Thin Solid Films; Microel. Reliab.; Microel. J), and many international conferences

· Served as a reviewer for Ph.D.; D.Sc. Degree in Bulgaria,India, Macedonia, Turkey

· Supervising Ph.D. students at Institute of Solid St. Phys., Sofia;Scopie Universirty, (Macedonia); Middle East TechnicalUniversity, Ankara, (Turkey)

· Guest Professor at Universities of Limerick (Ireland); Erlangen (Germany); Ankara, Izmir (Turkey); Scopie (Macedonia); Nish (Serbia), Kiev (Ukraine)

National and International Awards:

1999 First award of the Bulgarian Ministry of Science and          Education for significant achievements in physics          (results of the investigation on Contract: ”Ta₂O₅ thin          layers as an active dielectric for submicroelectronics”).

2000 Award of the University of Nish, Serbia for          significant scientific results, reported on several          International Conferences on Microelectronics,          MIEL, held biannually in Nish, Serbia.

2006 Award of the Institute of Solid State Physics, (ISSF), Sofia,         Bulgaria (medal "Georgi Nadjakov") for essential achievements in         the field of modern microelectronics, and for contributions to scientific        development of ISSF.

Citations: more than 350 in scientific journals, books and monographs 

LIST OF PUBLICATIONS: 

K.I. Kirov, N.A. Ivanov, E.D.Atanassova and G.M. Minchev, "DC magnetron system for cathode sputtering", Vacuum, 26 (1976), pp.237-241.

S. Alexandrova, E. Atanassova, M. Ivanovich, P. Kamadjiev, K.Kirov and S. Simeonov "Production and properties of Al2O3 layers on silicon substrates", Electr. Lett. 12 (1976), pp.169-170.

E. Atanassova, P.Kamadjiev, K. Kirov and S. Simeonov, "Preparation and electrophysical properties of Al2O3 layers on silicon substrates", Thin Solid Films, 32 (1976), pp.77-79.

K.Kirov, E.Atanassova and N.A. Ivanov, "Investigation of MIS structures with Al2O3 insulation layers obtained by d.c. reactive sputtering", Thin Solid Films, 41 (1977) L21-L23.

K.I. Kirov, E.D. Atanassova, S.P. Alexandrova, B.G. Amov and A. Djakov, "Properties of SiO2 films obtained by oxygen implantation into silicon", Thin Solid Films, 48 (1978), pp.187-192.

K.I. Kirov, E.D. Atanassova and N.A. Ivanov, "Investigation of Al2O3 layers obtained by DC planar-magnetron sputtering", Phys. St. Sol. (a), 50 (1978), pp.363-368.

E.D. Atanassova, K.I. Kirov, B.G. Panchev and S.S. Georgiev "Some investigations of Si and SiO2 surface etched in CF4 or CF4 – O2 plasma", Physica St. Sol. (a) 59, (1980), pp.853-859.

E.D. Atanassova, K.I. Kirov and E. Kantardjeva, "Formation of ultrathin oxide films on silicon in RF oxygen plasma", Physica St. Sol. (a), 64 (1981), pp.73-80.

E.D. Atanassova and A.V. Shopov, "Electron energy loss and Auger electron spectroscopy of ultrathin oxide films on silicon obtained in RF oxygen plasma", Appl. Surf. Sci., 10 (1982), pp.284-301.

E.D. Atanassova and D.I. Pushkarov, "I-V Characteristics of tunnel MOS structures with silicon oxide obtained in RF oxygen plasma", Solid St. Electr., 25 (1982), pp.781-789.

E.D. Atanassova and A.V. Shopov, "Interfacial transition region between silicon and ultrathin plasma Si Oxide", Appl. Surf. Sci., 16 (1983), pp.395-404.

E.D. Atanassova and A.P. Kovtchavzev, "Interface properties of metal/oxide/semiconductor structures with ultrathin plasma SiO2", Thin Solid Films, 100 (1983), pp.131-139.

J. Kassabov, E. Atanassova, E. Goranova, "Carrier mobility in inversion chanel and radiation defects in Si-SiO2 system obtained or treated in rf gas plasma", Conf. on Semicond. Surf. and Interf., Reinhardsbrunn, Germany, 14-19 Nov. (1983), Conf. Abstract, p. 57.

J. Kassabov, E. Atanassova, E. Goranova, "Carrier mobility in inversion layers and RF plasma induced radiation defects at the Si-SiO2 interface", Solid St. Electr., 27 (1984), pp.13-19.

E.D. Atanassova, invited paper, "Investigation of the oxidation process and the properties of ultrathin SiO2 obtained in RF oxygen plasma", in "Advances in low-temperature plasma chemistry, technology, applications" (Ed.) H.V. Boenig Vol.1 pp.11-28 Technomic Publ. Com., Inc. (1984) PA, USA; as a rapid communication in Plasma News report, 1 (1985) pp. 59-60.

J. Kassabov, E. Atanassova and E. Goranova, invited paper, "Inversion channel transport properties of plasma treated Si-SiO2 structures with different oxide thickness” a) in "Advances in low-temperature plasma chemistry, techn., appl." (Ed.) H.V. Boenig, Vol.2 (1988), Techn. Publ. Comp., Inc. PA, USA, pp.249-264. b) "Plasma News Report" April 1986, pp.43-56.

E.D. Atanassova and L.I. Toncheva, "The effect of RF plasma oxidation and the subsequent temp. annealing on the morphology of the silicon surface", Thin Solid Films, 137 (1986), pp.235-242.

Z.G. Ivanova, E.D. Atanassova and A. Toneva, "Plasma etching of amorphous GeSx thin films", Thin Solid Films, 136 (1986), pp.123-127.

L.I. Popova, E.D. Atanassova, D.I. Kolev and B.M. Nikolova, "IR study of ultrathin plasma SiO2 and plasma treated thermal SiO2 films", J. of Non Cryst. Solids, 85 (1986), pp.382-392.

J. Kassabov, E. Atanassova, D. Dimitrov and E. Goranova, "UV radiation effects of argon plasma Si-SiO2 structures", Microelectronics J., 18 (1987), pp.21-27.

J.Kassabov, E. Atanassova, D. Dimitrov and E. Goranova, "Electrical properties of Si-SiO2 structures treated in helium plasma", Microelectr. J., 18 (1987), pp.5-12.

D.I. Pushkarov, E.D. Atanassova , "Defection Heat-Capacity and High-Temperature Anomaly of Solid 3He", (in Russian), Communication JINR P17–87-199, Dubna (1987)

D.I. Pushkarov, E.D. Atanassova , "Defection Diffusion in a Rotating Quantum Crystal", (in Russian), in “Problems of Statistical Mechanics” Commun. JINR, D17-88-95, Dubna (1988), p.304

D.I Pushkarov, E.D. Atanassova , "Quasimomentum Conservation Law in Deformable Solids", D17-88-95, Dubna (1988), p.309

L.I. Popova, E.D. Atanassova, S.K. Peneva, E. Tcukeva, "Microstructure modification of SiO2 after plasma treatment", Proc. 5th Int. School "Physical Problems of Microelectronics", Ed. J.Kassabov, World Sci., Singapore, (1987), pp.446-456.

L.I. Popova and E.D. Atanassova, invited paper, "IR spectra (50 - 4000 cm-1) of ultrathin plasma SiO2" in "Advances in low-temperature plasma chemistry, technology, applications". Ed. H.V. Boenig (1988) Techn. Publ.Com., Inc. CA, USA vol.2 pp.243-248.

J. Kassabov, E. Atanassova, D. Dimitrov and E. Goranova, "Ar plasma treatment effects on Si-SiO2 structures" Solid St. El., 31 (1988), pp.147-154.

J. Kassabov, E. Atanassova, D. Dimitrov and J. Vasileva, "Effects of hydrogen plasma on thin-oxide Si-SiO2 structures", Semicond. Sci. Techn., 3 (1988), pp.686-690.

L.I. Popova, E.D. Atanassova, S.K. Peneva and E.A. Tcukeva, "On the structure of thin plasma-treated thermal SiO2 films", Cryst. Res. Technol., 23 (1988), pp.981-990.

S.K. Peneva, L.I. Popova, E. Tcukeva and E.D. Atanassova, "RHEED investigation of unusual crystalline states in amorphous SiO2 films", Cryst. Res. Techn., 24 (1989), pp.791-799.

J. Kassabov, E. Atanassova, D. Dimitrov and J. Vasileva "Influence of helium plasma UV radiation on the channel mobility and charges in Si-SiO2 structures", Thin Solid Films, 169 (1989), pp.43-49.

L.I. Popova, S.K. Peneva, E.A. Tcukeva and E.D. Atanassova, "On the behaviour of unusual crystalline state in thermally grown SiO2 thin films", Materials Letters, 8 (1989), pp.357-360.

J. Kassabov, E. Atanassova, E. Goranova, D. Dimitrov and J. Vasileva, "Plasma processing effects on O2-HCl grown Si-SiO2 structures", Solid State Electr., 32 (1989), pp.535-540.

E. Atanassova and J. Kassabov, "Low-temperature plasma nitridation of thin thermal SiO2 and a silicon surface with native oxide", Microelectronics Journal, 21 (1990), pp.5-21.

L.I. Popova, S.K. Peneva, E. Atanassova, E.A. Tcukeva, "RHEED investigation on low-temperature thermal SiO2 films",.Cryst. Res. Technol., 26 (1991), pp.425-432.

E.D. Atanassova and A.V. Shopov, "Auger electron spectroscopy and low energy electron loss spectroscopy investigation of plasma nitrided thin thermal SiO2 and native oxide on silicon", Thin Solid Films, 202 (1991), pp.267-282.

J. Kassabov and E. Atanassova, invited paper, "Effects of low-temperature plasma (Ar, He, H2) on thin Si-SiO2 structures", in "Advances in low-temperature plasma chemistry, technology, applications".vol.4 (1992) pp.123-152 Ed. H.V. Boenig, Technomic Publishing Co., Inc. USA.

J. Kassabov, E. Atanassova, J. Vasileva and D.Dimitrov, "Influence of UV Radiation and source-to-bulk bias on the processes in the Si-SiO2 inversion channel", Solid St. Electr., 35 (1992), pp.1621-1627.

E. Atanassova, D.Dimitrov, "Influence of low energy UV irradiation on the processes in the Si-SiO2 inversion channel", 13th General Conf. of the Cond. Matter Division European Phys. Soc., Regensburg, Germany, March 29-April 2 (1993), Conf. Abstract, p.1698.

E.D. Atanassova, L.I. Popova and D.I. Kolev, "IR study of plasma nitrided thermal SiO2 and pure silicon", Thin Solid Films, 224 (1993), pp.7-13.

E. Atanassova and T. Dimitrova, "Electrical studies of the reactions between ethanol vapours and inversion mode Si-thin SiO2 structures", INFOS'93, Delft; Microel. Engin. 22 (1993), pp.239-242.

A. Paskaleva and E. Atanassova, "Fowler-Nordheim tunneling injection in argon-plasma treated Si-SiO2 system", a) Semicond. Sci. and Technol., 8 (1993), pp.1566-1570. b) Plasma News Report, February (1994), pp.80-82.

T. Dimitrova and E. Atanassova, "Electrical properties of thin SiO2 layers after N2O or NH3 plasma action", 9th Inter. Conf. on thin Films, 6-10 Sept., Vienna, Austria (1993).

E. Atanassova and T. Dimitrova, "Influence of the ethanol vapour on the transport and dielectric properties of Si-SiO2 system", Solid St. Electr., 36 12 (1993), pp.1711-1716.

E.D. Atanassova and L.I. Popova, "Plasma nitridation of thin films: AES, ELS and IR Study", J. of Nucl. Mat., 200 (1993), pp.421-425; 12th Intern. Vacuum Congress, 8th Int. Conf. on Solid Surf., The Hague, The Netherlands, 12-16 Oct. (1992).

E. Atanassova and J. Koprinarova, "Si-ultra thin SiO2 structures as a gas chemical sensor", Proc. of the 7th Intern. School on Cond. Matt. Phys. "Electronic and Optoelectr. Mat. for the 21th century" Varna, Bulgaria, Eds. J.M. Marschall, N. Kirov, A. Vavrek, World Sci. Singapore (1993) pp.465-469.

T. Dimitrova, E.D. Atanassova, G.D. Beshkov, J. Pazov, "Thin thermal SiO2 after NH3 or N2O plasma action under PECVD conditions", Thin Solid Films, 252 (1994), pp.89-97.

E. Atanassova, "Charge Build-up Phenomena in MOS structures after action of nonuniform magnetized plazma", Proc. of the 8th Intern. School on Cond. Matt. Phys. "Electronic, Optoelectr. and Magnetic Thin Films",Varna, Bulgaria, Eds. J.M. Marschall, N. Kirov, A. Vavrek, World Sci. Singapore (1994), 464-467, invited lecture.

T. Dimitrova, J. Koprinarova, E. Atanassova, "Thin rf Sputtered Ta2O5 as a Gate Dielectric for ULSI", Proc. of the 8th Intern. School on Cond. Matt. Phys. "Electronic, Optoelectr. and Magnetic Thin Films", Eds. J.M. Marschall, N. Kirov, A. Vavrek, World Sci. Singapore (1994), 468-471.

A. Paskaleva, E. Atanassova, G. Beshkov "Electrical characterization of the RTA treated thermally grown SiO2", Proc. of the 8th Intern. School on Cond. Matt. Phys. "Electronic, Optoelectr. and Magnetic Thin Films", (Eds.) J.M. Marschall, N. Kirov, A. Vavrek, World Sci. Singapore (1994), 452-455.

E.D. Atanassova and J.B. Koprinarova, "Sensitivity of modified gateless FET-structure to ethanol vapour", Microelectr. J., 26 (1995), pp.421-429.

E.D. Atanassova, T. Dimitrova, J.B. Koprinarova, "Elemental composition and structure properties of thin rf sputtered Ta2O5 layer", "4th European Vacuum Conference", Uppsala, Sweden, June 13 - 17 (1994), Vacuum, 46 (1995), pp.889-891.

A.P. Paskaleva, E.D. Atanassova, G.D. Beshkov, "Rapid thermal annealing of SiO2 for VLSI applications", EMRS Spring Meeting, Council of Europe, Strasbourg, France, May 24 - 27 (1994), Journal of Non-Crys. Solids, 187 (1995), pp.35-39.

A.P. Paskaleva, E.D. Atanassova, G.D. Beshkov, "Effect of rapid thermal annealing in vacuum on the properties of thin SiO2 films", J. of Phys. D: Appl. Phys., 28 (1995), pp.906-913.

E.D. Atanassova, "Thin oxide MOS damages caused by wafer charging in magnetized helium plasma", Thin Solid Films, 264 (1995), pp.72-81.

E.D. Atanassova, T. Dimitrova, J.B. Koprinarova, "AES and XPS study of thin rf sputtered Ta2O5 layers", Appl. Surf. Sci., 84 (1995), pp.193-202.

E.D. Atanassova, "Thin - oxide - MOS damages generated after treatment in MERIE reactor", Proc. 20th International Conference on Microelectronics (MIEL'95), vol.1, Nish, Serbia, 12-14 Sept. (1995), pp.41-46.

A. Paskaleva, E.D. Atanassova, "Very thin SiO2 layers after rapid thermal annealing in vacuum, Proc. 20th International Conference on Microelectronics (MIEL'95), vol.1, Nish, Serbia, 12-14 Sept. (1995), pp.57-60.

T. Dimitrova, E. Atanassova, "Structural and electrical properties of thin rf sputtered Ta2O5", Proc. of the 8th Intern. School on Cond. Proc. GAS'95, International Semiconductor Conference, 18-th Ed. 11-14. Oct., Sinaia, Romania (1995), 279-282.

E. Atanassova, A.Paskaleva "Mobility degradation of inversion layer carriers due to MERIE type plasma", Solid St. Electr., 39 (1996), pp.1033-1041.

E. Atanassova, A. Paskaleva, "Influence of the Rapid Thermal Annealing in vacuum on the XPS characteristics of thin SiO2", Applied Surface Science , 103 (1996), pp.359-367.

E.Atanassova, "Thin Oxide MOS damage generated after treatment in a MERIE reactor", Microelectron. Reliab., 37 (1997), pp.1039-1043.

D. Spassov, E. Atanassova, "Leakage current and conduction mechanisms of thermally oxidized Ta2O5 films on Si", Intern. School on New Materials and trends in microelectronics and optoelectronics", June 2-6 (1997), Sozopol, Bulgaria

E. Atanassova, "Room temperature reduction of MERIE-like plasma - induced interface states", Thin Solid Films, 301 (1997), pp.1-6.

E. Atanassova, D.Spassov, "Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si", Proc. 21st Int. Conf. on Microel.(MIEL 97) Vol.2, Nish, Yugoslavia 14-17 Sept. (1997) 613-616; Microel. Rel., 38 (1998), pp.827-832.

E. Atanassova, A. Paskaleva, "RIE nitrogen plasma induced structural changes in thin SiO2 layers", Proc. 21st Int. Conf. on Microel. (MIEL 97) Vol.2, Nish, Yugoslavia 14-17 Sept. (1997), pp.617-620

E. Atanassova, A. Paskaleva, "XPS study of thin thermal SiO2 layers after RTA in vacuum", Proc. 9th Int. School on Cond. Matt. Phys. "Future directions in thin film science and technology", 9-13 Sept.(1996), Varna, Bulgaria, World Sci. Singapore, (Eds.) J.M.Marshall, N.Kirov, A.Vavrek, J.M. Maud, (1997) pp.365-368.

E. Atanassova, T. Dimitrova, J. Koprinarova, "Carrier mobility and scattering mechanisms in thin Ta2O5 - Si structures, Proc. 9th Int. School on Cond. Matt. Phys. "Future directions in thin film science and technology", 9-13 Sept.(1996), Varna, Bulgaria, World Sci. Singapore, Eds. J.M.Marshall, N.Kirov, A.Vavrek, J.M. Maud, (1997) pp.445-448.

D.Spassov, E. Atanassova, "Thermally oxidized Ta2O5 on Si - dielectric and breakdown characteristics", Proc. 9th Int. School on Cond. Matt. Phys. "Future directions in thin film science and technology", 9-13 Sept.(1996), Varna, Bulgaria, World Sci. Singapore, Eds. J.M.Marshall, N.Kirov, A.Vavrek, J.M. Maud, (1997) pp.449-452.

E. Atanassova, A. Paskaleva, "Structural changes in thin SiO2 on Si after RIE-like nitrogen plasma action", Appl.Surf.Sci., 120 (1997) pp.306-316.

D. Spassov, E. Atanassova, "Thermal Ta2O5 films as a gate insulator for thin film capacitors", Int. J. Electr., 84 (1998), pp.453-466.

T. Dimitrova, E. Atanassova, "Electrical and transport properties of rf sputtered Ta2O5 on Si", Solid St. Electr., 42 (1998), pp.307-315.

A. Paskaleva, E. Atanassova, "Damage in thin SiO2-Si structures induced by RIE-mode nitrogen and oxygen plasma", Solid St. Electr., 42 (1998), pp.777-784.

E. Atanassova, T. Dimitrova, "Carrier mobility in inversion layers of Si-thin Ta2O5 structures", Microel.Rel., 38 (1998), pp.833-837.

E. Atanassova, D. Spassov, "X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si", Appl. Surf. Sci., 135 (1998) pp.71-82.

T. Dimitrova, E. Atanassova, "Interface and oxide properties of rf sputtered Ta2O5-Si structures", 10th International School on Vacuum Electron and Ion Technologies, 22 -- 27 September 1997, Varna, Bulgaria, Vacuum, 51 (1998), pp.151-152.

E. Atanassova, "Thin thermal Ta2O5 layers on Si as a gate dielectric for submicron application", Second Conf. of Phys. of Republic Macedonia, 2-4 Oct. (1998) Ohrid, Macedonia, invited lecture.

N. Novkovski, E. Atanassova, T. Dimitrova, "RF sputtered Ta2O5 on Si - dielectric and breakdown characteristics", Second Conf. of Phys. of Republic Macedonia, 2-4 Oct. (1998) Ohrid, Macedonia.

T. Dimitrova, E. Atanassova, J. Koprinarova, "Thin films capacitors with Ta2O5 insulator - dielectric characteristics", Proc.10th ISCMP "Thin film materials and devices - developments in science and technology", 1-4 Sept. (1998) Varna, Bulgaria, World Sci. Singapore, Eds. J.M.Marshall, N.Kirov, A. Vavrek, J.M. Maud, (1999), pp.309-312.

E. Atanassova, D. Spassov, "XPS study of thin Ta2O5-Si system", Proc.10th ISCMP "Thin film materials and devices - developments in science and technology", 1-4 Sept. (1998) Varna, Bulgaria, World Sci. Singapore, Eds. J.M.Marshall, N.Kirov, A.Vavrek, J.M. Maud, (1999), pp.373-376.

E. Atanassova, "Thin Ta2O5 layers as an alternative to SiO2 for submicron application", Proc.10th ISCMP "Thin film materials and devices - developments in science and technology", 1-4 Sept. (1998) Varna, Bulgaria, World Sci. Singapore, (Eds.) J.M.Marshall, N.Kirov, A.Vavrek, J.M. Maud, (1999), pp.109-116, invited lecture.

E. Atanassova, D. Spassov, "Hydrogen annealing effects on the properties of thermal Ta2O5 on Si", Microel. J., 30, (1999), pp.265-274.

E. Atanassova, invited paper, "Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application", Microel. Reliab, 39, (1999), pp.1185-1217.

N. Novkovski, M. Pecovska-Gjorgjevich, E. Atanassova and T. Dimitrova, "Stress degradation of low field leakage in aluminium gate MOS structures containing RF magnetron sputtered thin Ta2O5 films on silicon", Phys. St. Sol.; 172/2, R9, (1999).

T.Dimitrova, E.Atanassova, "Interface oxide and transport properties of rf sputtered Ta2O5 structures", Balkan Phys. Lett., 7 (1), (1999) pp.52-56.

A.Paskaleva, E.Atanassova, "Structural nature of the N2 RIE plasma induced slow states and bulk traps in thin SiO2-Si structures", E-MRS 1999 Spring Meetenig, Strasbourg, France; Material Sci. Engineering B 71(2000) pp.115-119.

A.Paskaleva, E.Atanassova, "Electrical stress and plasma induced traps in SiO2", Microel. Reliab., 40 (2000) pp.933-940.

E.Atanassova, A.Paskaleva, invited paper, "Electrically active defects in thin SiO2-Si structures generated by MERIE- and RIE-mode plasmas",Microel. Reliab., 40 (2000) pp.381-425.

D. Spassov, E. Atanassova, G. Beshkov, "Effect of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5 - Si structures", Microel. J., 31 (2000) pp.653-661.

T. Dimitrova, E. Atanassova, J. Koprinarova, "Dielectric characteristics of MOS capacitors with rf sputtered Ta2O5", Proc. of the 22-nd IEEE Intern. Conf. on Microel. (MIEL 2000), Nish, Yugoslavia, May 14-17, 2000, Vol.1, pp. 373-376.

A. Paskaleva, E. Atanassova, "Bulk oxide charge and slow states in Si-SiO2 structures generated by RIE-mode plasma", Proc. of the 22-nd IEEE Intern. Conf. on Microel. (MIEL 2000), Nish, Yugoslavia, May 14-17, 2000, Vol.1, pp. 323-326.; The report has been approved by the Programme Committee for publishing in: Microel. Reliab., 40 (2000) pp.2033-2039.

N. Novkovski, M.Pecovska-Gjorgjevich, E.Atanassova, T.Dimitrova, "Stress induced degradation in rf deposited Ta2O5 films on Si", Proc. 22nd Intern. Conf. on Microel. MIEL'2000, Nish, Serbia, 14-17 May, 2000, Vol.1 (2000) pp.377-378.

A. Paskaleva, E. Atanassova, T.Dimitrova, "Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by r.f. sputtering", presented at 11th International School on Vacuum, Electron and Ion technologies, VEIT'99, Varna, Bulgaria, 20-25 Sept. 1999, Programme Abstracts, PP-C14, p.61, Vacuum 58 (2000) p 470.

E. Atanassova, D. Spassov, invited paper, "Thin Ta2O5 films on Si",Surface Science Spectra 7 (2) (2000) pp.143-149.

M. Pecovska-Gjorgjievic, N. Novkovski, E. Atanassova, D. Spasov, “Dielectric characteristics of thermally oxidized Ta2O5 thin films”, Physica Macedonica, 50 (2000) pp. 59-64.

E. Atanassova, invited paper, "Magnetron enhanced reactive ion etching (MERIE) mode plasma induced defects in thin SiO2-Si microstructures", in: "Handbook of Surfaces and Interfaces of Materials",ed. H.S. Nalwa, Academic Press, San Diego, San Francisco, New York, Boston, London, Sydney, Tokyo, (2001), Vol 3, pp 387-404.

E.Atanassova, T.Dimitrova, invited paper, "Thin Ta2O5 layers on Si as an alternative to SiO2 for high density DRAM applications", in: "Handbook of Surfaces and Interfaces of Materials",ed. H.S. Nalwa, Academic Press, San Diego, San Francisco, New York, Boston, London, Sydney, Tokyo, (2001), Vol 4, pp 439-479.

T. Dimitrova, K. Arshak, E. Atanassova, "Crystallization effects in oxygen annealed Ta2O5 thin films on Si", Thin Solid Film, 381 (2001) pp.31-38.

E. Atanassova, invited lecture, "Ta2O5 insulator for future integrated circuits? Challenges and realities".11th International School on Condensed Matter Physics, Sept. 2000, Varna, Bulgaria, Proc. pp. 178-185, (2001).

M. Kalitzova, A.Peeva, E. Atanassova, G.Vitali, G.Zollo, C.Pizutto, "HRTEM and RHEED study of oxygen annealing induced ctystallization in Ta2O5 layers", 11th International School on Condensed Matter Physics, Sept. 2000, Varna, Bulgaria, Proc. pp. 252-255, (2001).

T. Dimitrova, K. Arshak, E. Atanassova, "Effect of O2 annealing on crystalline structure and electrical properties of Ta2O5 thin films on Si", 11th International School on Condensed Matter Physics, Sept. 2000, Varna, Bulgaria, Proc. pp. 244-247, (2001).

A.Paskaleva, E. Atanassova, "Electrically active defects generated by N2 RIE plasma in thin SiO2 structures", 11th International School on Condensed Matter Physics, Sept. 2000, Varna, Bulgaria, Proc. pp.248-251, (2001).

E. Atanassova, A. Paskaleva, R. Konakova, D. Spassov, V. Mitin, "Influence of gamma radiation on thin Ta2O5-Si structures", Microel. J., 32 (2001) pp. 553-562.

A.Paskaleva, E. Atanassova, "Profiling of stress and plasma induced positive oxide charge in thin SiO2 layers", presented at Fourth General Conference of the Balkan Physical Union, Veliko Turnovo, 22-27 August 2000; Balkan Physics Letters, 9 (4) (2001) pp.170-173 .

E. Atanassova, "Thermal Ta2O5 for application in memory capacitors for DRAMs", 19th Bulgarian-Greek Symposium on Semicond. and Solid State Phys., 15-16 Dec., 2000, Sofia, Bulgaria.

E. Atanassova, N. Novkovski, A.Paskaleva,M. Pezovska-Gjorgievich "Conduction mechanisms in thin rf sputtered Ta2O5 on Si", Solid State Electr., 46 (11) (2002), pp.1887-1898.

M. Pecovska-Gjorgjievic, N. Novkovski, E. Atanassova, T. Dimitrova, "Leakage currents in rf sputtered Ta2O5 thin films", presented at Fourth General Conference of the Balkan Phys. Union, Veliko Turnovo, 22-27 August, 2000, Bulgaria, (BPU -4).

N.S. Boltovets, A.B. Komalov, R.V. Konakova, E.Yu. Kolyadina, Milenin V.V., E. Atanassova, “The effects in metal-semiconductor structures stimulated by high power electromagnetic radiation”, Proc. 4th Intern. Conf. “Radiation effects in solids”, 3-5 Oct (2001) Minsk, Belarus, pp. 114-116, (in russian).

E. Atanassova, A. Paskaleva, introductory invited paper, “Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs”,Microel. Reliab., 42 (2002) pp. 157-173.

E. Atanassova, D. Spassov, “Thermal Ta2O5 – alternative to SiO2 for high density dynamic memories”, Proc. 23rd Int. Conf. Microel., MIEL’2002, Nis, Yugoslavia, 12-15 May, 2002, Vol.2 (2002) pp.709-712.

A. Paskaleva, E. Atanassova, N. Novkovski, M. Pecovska-Gjorgievich, “Conduction mechanisms in thin rf sputtered Ta2O5 on Si and their dependence on O2 annealing”, Proc. 23rd Int. Conf. Microel., MIEL’2002, Nish, Yugoslavia, 12-15 May, 2002, Vol.2 (2002) pp.755-758.

M. Pecovska-Gjorgievich, N. Novkovski, E. Atanassova, “Stress-induced leakage currents in thin Ta2O5 films”, Proc. 23rd Int. Conf. Microel., MIEL’2002, Nish, Yugoslavia, 12-15 May, 2002, Vol.2 (2002) pp.759-762.

E. Atanassova, N.S. Boltovets, E.Yu. Kolyadina, R.V. Konakova, J. Koprinarova, L.A. Matveeva, V.V. Milenin, V.F. Mitin, V.V. Shynkarenko, D.I. Voitsikhovskyi, “Structural-phase ordering in Ta2O5–p-Si system enhanced by microwave processing”, Proc. 23rd Int. Conf. Microel., MIEL’2002, Nish, Yugoslavia, 12-15 May, 2002, Vol.2 (2002) pp.531-534.

E.Atanassova, D.Spasov, “Thermal Ta2O5 – alternative to SiO2 for storage capacitor application”, Microel. Reliab., 42 (8) (2002) pp.1171-1177.

E.Atanassova, A.Paskaleva, "Leakage current in the system thin films Ta2O5 on Si – is it a limiting factor for nanoscale dynamic memories?", 12th International School on Condensed Matter Physics, Sept. 2002, Varna, Bulgaria, J. of Material Science: Materials in electronics, 14 (2003), pp.671-675, invited lecture.

E.Atanassova, E.Y.Kolyadina, R.V.Konakova, J.Koprinarova, L.A.Matveeva, V.F.Mitin, V.V.Shynkarenko, D.I.Voitsikhovskyi, “The effects in Ta2O5 induced by microwave treatment”, Proc. of 14th Int. Symposium: “Thin Films in Optics and Electronics”, Kharkov, Ukraine, 22-27 April, 2002, Part 1 (2002) pp.84-87.

E. Atanassova, D. Spassov, A. Paskaleva, J. Koprinarova, M. Georgieva, “Influence of oxidation temperatures on the microstructure and electrical properties of Ta2O5 on Si”, Microel. J., 33 (11) (2002) pp.907-920.

E.Atanassova, M.Kalitzova, G.Zollo, A.Paskaleva, A.Peeva, M.Georgieva, G.Vitali, “High temperature-induced crystallization in Ta2O5 layers and its influence on the electrical properties”, Thin Solid Films, 426 (2003) pp.191-199.

M.Pecovska-Gjorgjievich, N.Novkovski, E.Atanassova, Electrical properties of thin RF sputtered Ta2O5 films after constant current stress”, Microelectronics Reliability, 43 (2003) pp.235-241.

A.Paskaleva, N.Novkovski, E.Atanassova, M.Pecovska-Gjorgjevich, “Density and spatial distribution of MERIE-like plasma induced defects in SiO2”, Phys. Stat. Sol. (a), 199 (2) (2003) pp.243-249.

M.Pecovska-Gjorgjevich, E.Atanassova, N.Novkovski, D.Spasov, “Dielectric characteristics and conduction mechanism of Ta2O5 MOS structures with various gate electrodes”, Proc. BPU-5: Fifth General Conference of the Balkan Physical Union, August 25-29, 2003, Vrnjačka Banja, Serbia and Montenegro, pp.1615-1618.

E.Atanassova, G.Tyuliev, A.Paskaleva, D.Spassov, K.Kostov, “XPS study of N2 annealing effect on thermal Ta2O5 layers on Si”, Appl. Surf. Sci., 225 (2004) pp.86-99.

G.Aygun, E.Atanassova, A.Alacakir, L.Ozyuzer, R.Turan, “Oxidation of Si surface by a Pulsed Nd-YAG Laser”, J. Phys. D: Appl. Phys., 37 (2004) pp.1569-1575.

Tz.Babeva, E.Atanassova, J.Koprinarova, “Optical characteristics of thin rf sputtered Ta2O5 layers”, Phys. St. Sol. (a) 202, No.2 (2005) pp.330-336.

E.Atanassova, R.V.Konakova, V.F.Mitin, J.Koprinarova, O.Lytvyn, O.Okhrimenko, V.Schynkarenko, D.Virovska, “Effect of microwave radiation on the properties of Ta2O5/Si microstructures”, Microel. Reliab., 45 (2005) pp.123-135.

N.Novkovski, E.Atanassova, “Constant current stress characteristics of rf sputtered Ta2O5 films on Si”, Proc. 24the Int. Conf. of Microel. (MIEL’2004), Nish, Serbia and Montenegro, 16-19 May, (2004) Vol2 (2004) pp.683-684.

E.Atanassova, A.Paskaleva, “High-temperature N2 annealing – a promising way for improving the structure of Ta2O5 and its interface with Si”, Proc. 24the Int. Conf. of Microel. (MIEL’2004), Nish, Serbia and Montenegro, 16-19 May, (2004) Vol2 (2004) pp.467-470.

N.Novkovski, E.Atanassova, “Injection of holes from the silicon substrate in Ta2O5 films grown on silicon”, Appl. Phys. Lett., 85 (15) (2004) pp.3142-3144.

E.Atanassova, G.Tyuliev, A.Paskaleva, D.Spassov, K.Kostov, invited paper, “N2 annealing effect on thermal Ta2O5 layers on Si”,Surf. Sci. Spectra, v.11 (2004) 1-25.

N. Novkovski, E. Atanassova, “Stress degradation of Ta2O5 on Si”, Int. Conf. on Advanced in Processing Testing and Appl. of Dielectric Materials, APTADM’ 2004 (15-19 Sept.), Wroslaw, Poland, 2004

E.Atanassova, A.Paskaleva, N.Novkovski, M.Georgieva, “Conduction and reliability behavior of thermal Ta2O5-Si structures and the effect of the gate electrode”, J. Appl. Phys. 97 (2005) 094104 (11 pages).

G.Aygun, E.Atanassova, R.Turan, Tz.Babeva, “Reflectance spectra and refractive index of a Nd:YAG laser-oxidized Si surface”, Materials Chemistry and Physics, 89 (2005) pp.316-320.

B.Pesich, E.Atanassova, N.Stojadinovic, “Reliability characteristics of thin SixNyOz films and the effect of gate electrode”, Proc. BPU-5; Fifth General Conf. of Balkan Phys. Union, Urujacka Banja, Serbia and Montenegro, 2003, pp.1631-1634.

P.Ozdag, E.Atanassova, M.Gunes, “The effects of oxide thickness on the interface and oxide properties of Me-Ta2O5-Si capacitors”, Intern. School on Cond. Matt. Phys. (ISCMP’2004), Varna, Bulgaria, J. of Optoel. and Advanced Materials, vol.7, N1, 2005, pp.293-296.

N.Novkovski, A.Paskaleva, E.Atanassova, “Dielectric properties of rf sputtered Ta2O5 on rapid thermally nitrided Si”, Semicond. Sci. and Technol., 20 (2005) pp.233-238.

A.Paskaleva, E.Atanassova, M. Georgieva, “Charge trapping and conduction mechanisms in Ta2O5 on nitrided silicon”, J.Phys.D: Appl.Phys., 38 (2005) 4210-4216.

N.Novkovski, E.Atanassova, “Dielectric properties of Ta2O5 films grown on silicon substrates plasma nitrided in N2O”, Appl.Phys.A, vol. 81 N6 (2005) pp.1191-1195.

N.Novkovski, E.Atanassova, “Origin of the stress induced leakage currents in Al-Ta2O5/SiO2-Si structures”, Appl.Phys.Lett., 86 (2005), 152104, pp.3

A. Paskaleva, R.R Ciechonski, M. Syvajarvi, E. Atanassova, R. Yakimova, “Electrical behaviour of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric”, J.Appl.Phys., 97, (2005), 124507, pp.4

A. Paskaleva, E. Atanassova, M. Lemberger, A.J. Bauer, invited paper, “Correlation between defects, leakage currents and conduction mechanisms in thin high-k dielectric layers” in ‘Defects in High-k Gate Dielectric Stacks”, Ed. Evgeni Gusev, NATO Sci. Series, Springer, 2006, pp.411-422

E. Atanassova, G. Aygun, R. Turan, T. Babeva, “Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation “, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 24 (2), (2006) pp. 206-211

N. Novkovski, E. Atanassova, “Wear-out of Al-Ta2O5/SiO2-Si structures under dynamics stress”, Appl. Surf. Sci. 252 (2006) pp.3833-3836

N. Novkovski, E. Atanassova, “A comprehensive model for the I-V characteristics of metal-Ta2O5/SiO2-Si structures”, Appl. Phys. A 83, (2006) pp.435-445

D. Spassov, E. Atanassova, D. Virovska, “Electrical characteristics of Ta2O5 based capacitors with different gate electrodes”, Appl. Phys. A 82, (2006) pp.55-62

E. Atanassova, A. Paskaleva, invited paper, “Leakage current and conduction mechanisms in Ta2O5 for Gigabit dynamic memories applications”, in “Thin Films and Coatings New Research”, Ed. B.M. Caruta, Nova Sci. Publ. Inc. New York, USA, (2005) pp. 27-48

E. Atanassova, A. Paskaleva, invited paper, “Effect of metal electrode on characteristics of Ta2O5 for DRAMs” in New Processes and Materials for the Next Microelectronics Generations”, Eds. S. Duenas and H. Castan, Trans World Res., Kerala, India, Ch. 4, 2006, pp. 77-111.

E. Atanassova, D. Spassov, A. Paskaleva, K. Kostov, “Composition of Ta2O5 stacked films on N2O - and NH3 – nitrided Si”, Appl. Surf. Sci., 256, (2006) pp. 2841-2851.

E. Atanassova, A. Paskaleva, “Challenges of Ta2O5-as high-k dielectric for nanoscale DRAMs”, invited lecture, Proc. 25th Intern. Conf. on Microelectronics, (MIEL 2006), Belgrade, Serbia, 14-17 May, 2006, IEEE El. Dev. Soc. Vol 1, (2006) pp.47-54

E. Atanassova, D. Spassov, A. Paskaleva, “Effect of the metal electrode on the characteristics of Ta2O5 capacitors for DRAMs applications’, Proc. 25th Intern. Conf. on Microelectronics, (MIEL 2006), Belgrade, Serbia, 14-17 May, 2006, IEEE El. Dev. Soc.Vol. 2, (2006) pp.581-584

N. Novkovski, E. Atanassova, “Reliability properties of Ta2O5 films grown on N2O plasma nitrided silicon”, Proc. 25th Intern. Conf. on Microelectronics (MIEL 2006), Belgrade, Serbia, 14-17 May, 2006, IEEE El. Dev. Soc. Vol. 2, (2006) pp.585-588

A. Paskaleva, E. Atanassova, ‘Beneficial effect of post metallization H2 annealing on Ta2O5 stack capacitors”, J. Phys. D Appl.Phys. Vol. 39, (2006) pp.2950-2954

E. Atanassova, D. Spassov, A. Paskaleva, “Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors”, Microel. Eng. Vol. 83, (2006), pp.1918-1926

N. Novkovski, E. Atanassova, “Approaching the limit of the SiO2 possibilities for application in nanoscale microelectronics”, J. of Optoelectronics and Advanced Materials, Vol.8, N3, (2006), pp.1238-1242

N. Novkovski, E. Atanassova, “Wear-out and breakdown of rf sputtered Ta2O5 films on silicon”, Appl.Phys..A , V.81, (2005), pp.1455-1458

V.V. Shynkarenko, E. Atanassova, “Influence on microwave radiation on Au-Ta2O5-Si capacitors” 2nd Intern. Sci. and Techn. Conference “Sensors electronics and microsystems technology”, Ukraine, Odessa, June 26-30, (2006), (book of abstracts p.282, in russian).

M. Pecovska-Gjorgjevich, D. Spassov, N. Novkovski, E. Atanassova, “Dielectric characteristics and reliability tests for thin Au-Ta2O5-SiO2 structures”, Rom.J.Phys., Vol. 50, N 9-10, pp.1009-1017, 2005

N. Novkovski, E. Atanassova, “Wear-out and breakdown of thermally grown Ta2O5 insulating films on plasma oxynitrided Si substrates”, Phys.Stat.Sol. (A) 203, N8, (2006), pp.2012-2017.

G. Aygun, E. Atanassova, K. Kostov, R. Turan, “XPS study of pulsed Nd:YAG laser oxidized Si”, J. of Non Crystalline Solids, 352 (2006) pp.3134-3139

N. Novkovski, E. Atanassova, "Wear- out of Al-Ta2O5/SiO2-Si structures under dynamic stress", Appl. Surf. Sci. 252 (2006) pp. 3833-3836

A. Paskaleva, E. Atanassova, "Post-metalization H2 annealing of electrically active defects in Ta2O5/nitride Si stacks", Proc. 6th Intern. Conf. on Advanced Semiconductor Devices and Microsistems", Smolence Castle, Slovakia, 16-18 Oct. 2006, IEEE El. Dev. Soc. N=06 EX1383, (2006) pp 25-28.

E. Atanassova, A. Paskaleva, invited paper, "Challehges of Ta2O5 as high-k dielectric for nanoscale DRAMs", Microel. Reliab. (2006), (in pres).

E. Atanassova, D. Spassov, A. Paskaleva, "Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors", Microel. Reliab. (2006), (in press).

2006