Text Box: Text Box: Research areas:
Physics and technology of metal-oxide-silicon structures :
MOS capacitors and MOSFETs
polysilicon thin film transistors (TFTs)
thin dielectric films, semiconductors, magnetic and metal layers 
microsystems technology and micromashining
microelectronic gas sensors
pressure and infrared sensors.
Physical Problems of Microelectronics


Micro- and microsystem technology represents one of the most promising future scientific areas in the world. The major strong research activities at the Laboratory of Microelectronics is related to the micro- and nano-technology, i. e. investigation, characterization, design and manufacturing of microdevices and new materials for microelectronics. The Laboratory consists of researchers with a broad knowledge base in physics, chemistry, electrical engineering, mechanics and materials science and engineering.


With the help of advanced Si micro and nano-fabrication infrastructure, the R&D activities of Microelectronics Lab focus on nanoscale CMOS devices using new materials and device architectures. Using our CMOS platform technology and Si nanotechnology as enabling capabilities, we are addressing the functional integration of materials, structures and devices for sensor and bio-electronics applications.