Institute of Solid State Physics "Acad.G.Nadjakov",   Bulgarian Academy of Sciences    Laboratory: Photoelectrical and Optical Phenomena in Wide Band Gap Semiconductors    72, Tzarigradsko Chaussee, Blvd., 1784 Sofia, BULGARIA Fax:  (+359 2) 975 36 32 Phone:  (+359 2) 7144 655 E-mail:  zdaneva@pronto.phys.bas.bg
Personal:	Born in Botevgrad, 1947 Married, two children
Education:	1966 - graduated from semiconductor technology schooI, Botevgrad 1971 – MS in quantum electronics from , Faculty of Physics, St. Kliment Ochridski University of Sofia 1979 – PhD (Physics and Mathematics)-Faculty of Physics, Moscow State University, “M.V. Lomonossov”
Employment history:	·         From 2004 – Assoc. Prof. at Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia ·        1990-2004 - Assistant Professor at Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia ·        1980-1990 - Assistant Professor, Head of Crystal growth Laboratory at Institute of Optics, Sofia ·        1975-1979- PhD student, Moscow State University, “M.V. Lomonossov”, Russia ·        1972-1975 Assistant Professor at Institute of Semiconductor devices, Botevgrad
Theses:	MS Thesis: Z. I. Ivanova – “Technology lasers”    PhD Thesis: Z. I. Ivanova - "Investigation of parametric light oscillation and amplification in high quality LiNbO3 monocrystals",   Moscow State University, “M.V. Lomonossov”, Russia, 1979 (in Russian).
Prior experience:	·     semiconductor device technology ·          parametric and tunable lasers ·          crystal growth of KDP, sapphire, Ti: sapphire, Bi12SiO20 and Bi12TiO20 monocrystals
Current research interests:	·    vacuum preparation of dielectric and semiconductor thin films and superlattices ·     semiconductor nanoparticles embedded in various matrices ·     electrical, optical and photoelectrical characterization of crystalline and amorphous semiconductors ·    thermostimulated current method ·     laser-iduced absorption in thin films and monocrystals
Scientific activity	More than 60 papers, about 120 citations.
Languages:	English, Russian

 

 

More important recent publications

1.      Deleva A, Peshev Z., Aneva Z.,  Kaprielov B., Videlova-Angelova E. and Angelov D., “Injection seeding in a dual-cavity pulsed Ti:Sapphire laser”, J. Modern Optics, 47, 793-803 (2000).

2.      D. Nesheva,  Z. Levi,  Z. Aneva,  V. Nikolova  and H. Hofmeister, “Experimental studies on the defect states at the interface between nanocrystalline CdSe and amorphous SiO_x”,.J. Phys.; Cond. Matter. 12, No 1, 751-759 (2000).

3.      D.Nesheva, H. Hofmeistter, Z. Levi,  Z. Aneva, “Nanoparticl layers of CdSe bured in oxid and chalcogenide thin film matrices”, Vacuum, 65, 109-113 (2002).

4.      D. Nesheva, I. Bineva, Z. Levi, Z. Aneva, Ts. Merdzhanova and J.C. Pivin, “Composition, structure and annealing-induced phase separation in SiO_x films produced by thermal evaporation of SiO in vacuum”, Vacuum, 68, 1-9 (2002).

5.      D. Nesheva, C. Raptis, А. Perakis, I. Bineva, Z. Aneva, Z. Levi, S. Alexandrova, H. Hofmeister, “Raman scattering and photoluminescence from Si nanoparticles in annealed SiO_x thin films”, J.Appl.Phys, 92, 4678-4683 (2002).

6.      D. Nesheva, Z. Levi, Z. Aneva, I. Zrinscak, C. Main, and S. Reynolds, ”Size-dependent absorption and defect states in CdSe nanocrystals in various multilayer structures”, J. Nanoscience & Nanotechnology, 3, 1-8 (2003).

7.      I.Bineva, D.Nesheva, Z.Aneva, Z.Levi, C.Raptis, H.Hofmeister, S.Stavrev, “Effects Of Annealing Atmosphere And Substrate On The Photoluminescence And Raman Scattering From Si Nanocrystals In Sio₂ Matrix”, J. Material Sci.:Materials For Electronics, 14, 799 (2003).

8.      Z. G. Ivanova, Z. Aneva, Z. Cernosek, E. Cernoskova, V. S. Vassilev, “Influence of Ga on the luminescence efficiency of Er-doped Ge-S-Ga glasses”, J. Material Sci.:Materials For Electronics, 14 761-762 (2003).

9.    C. Raptis, D. Nesheva, Y. C. Boulmetis, Z. Levi and Z. Aneva, “Exiton related resonant Raman scattering from CdSe quantum dots in an amorphous GeS2 thin film matrix”, J. Phys.; Cond. Matter. 16, 8221-8232 (2004).

10.  Z. Aneva, D. Nesheva, “Recombination of photoexcited carriers in Bi₁₂TiO₂₀ monocrystals”, Journal of Optoelectronics and Advanced Materials, 7, No. 1, 513-515, (2005).

11.  D. Nesheva, S. Reynolds, Z. Aneva, C. Main, Z. Levi, “Effects of thermal annealing and long-term ageing on electronic defects in CdSe thin films”, Journal of Optoelectronics and Advanced Materials, 7, No. 1, 517-520, (2005).

12.  Z.G. Ivanova, K. Koughia, Z. Aneva, D. Tonchev, V.S. Vassilev, S.O. Kasap, “Photoluminescence of Er³⁺ ions in (GeS₂)₈₀(Ga₂S₃)₂₀ glasses”, Journal of Optoelectronics and Advanced Materials, 7, No. 1, 349-352, (2005).

13.  Z.G. Ivanova, R. Ganesan, K.V. Adarsh, V.S. Vassilev, Z. Aneva, Z. Cernosek, E.S.R. Gopal, “Low-temperature luminescence quenching and local ordering study of Er-doped Ge-S-Ga glasses”, Journal of Optoelectronics and Advanced Materials, 7, No. 1, 345-348, (2005).

14.  D. Nesheva, S. Reynolds, C. Main, Z. Aneva and Z. Levi, “Deffect states in CdSe nanocrystalline layers”, Phys. Stat. Sol. (a) 202, 1081-1087, (2005).

15.  Z. Aneva, D. Nesheva, C. Main, and S. Reynolds, “Electronic defects in CdSe nanocrystals embedded in a GeS₂ amorphous matrix” Journal of Optoelectronics and Advanced Materials, 7, No. 3, 1377-1382, (2005).

16.  Z.G. Ivanova, R. Ganesan, Z. Aneva, and E.S.R. Gopal, “Influence of temperature on the photoluminescence efficiency of chalcogenide GeS₂-Ga₂S₃-Er₂S₃ glasses”, Materials Science and Engineering B, 122 152-155 (2005).

17.  D. Nesheva, Z. Levi, Z. Aneva, “Size effects and lattice disorder In GeS₂/CdSe nanostructures” Journal of Optoelectronics and Advanced Materials, 7, No. 4, 1837-1846, (2005).

18.  L. Pramatarova, E. Pecheva, D. Nesheva, Z. Aneva, A. L. Toth, E. Horvath, F. Riesz, “Hydroxyapatite growth on glass/CdSe/SiO_x nanostructures from nanopowders to functional materials”, Solid State Phenomena 106 (2005) 123-126, , ed. by R. Piticescu, W. Lojkowski and J. Blizzard

19.  D. Nesheva, I. Bineva, Z. Aneva, H. Hofmeister, “Hopping transport of dark and photogenerated carriers in Si rich SiO₂ thin films”, in "Progress in Materials Science Research", 2005, Edited by F. Columbus, Nova Science Publishers, Inc., p.27.

20.  C. Main, N. Souffi, S. Reynolds, Z. Aneva, R. Bruggemann, M. J. Rose, “Thermally Stimulated Currents in Thin-Film Semiconductors: Analysis and Modeling”, Mat. Res. Soc. Symp. Proc.  41.1 (2006).

21.  Z. Aneva, D. Nesheva, E. Vateva, “Computational analysis of thermally stimulated currents in Bi₁₂TiO₂₀ single crystals”, J. Appl. Phys., 100, 53704-53711 (2006).

22.  M. Šćepanović, M. Grujić-Brjćin, I. Bineva, D. Nesheva, Z. Popović, Z. Aneva, Z. Levi, “Raman study of ZnSe/SiOx multilayers”, poster - M. Šćepanović. Journal of Optoelectronics and Advanced Materials, 9, No1, 178-181 (2007).

23.   Z. Aneva, D. Nesheva, C. Main, S. Reynolds, “Determination of trap density in CdSe thin films from thermally stimulated conductivity” poster- Z. Aneva Journal of Optoelectronics and Advanced Materials, 9, 205-208 (2007).

24.  S. Reynolds, Z. Aneva, Z. Levi, D. Nesheva, V. Smirnov, C. Main, “ Potential gas sensor applications of semiconductor thin films based on changes of photoresponse”  poster- Z. Levi Journal of Optoelectronics and Advanced Materials, 9, No1, 209-211 (2007).

25.  C. Main Z. Aneva, , S. Reynolds, N. Souffi, R. Bruggemann, “Thermally stimulated currents in thin film conductors; computer modeling and experiment”- поканен доклад на C. Main Journal of Optoelectronics and Advanced Materials, 9, p.114-120  (2007).

26.  D. Nesheva, Z. Aneva, S. Reynolds, C. Main and A. G. Fizgerald, “Preparation of micro - and nanocrystalline CdSe and CdS thin films suitable for sensor applications” Journal of Optoelectronics and Advanced Materials, 8, No. 3, 2120-2125, (2006).

 

Last update February 2007