References

 

NANOSTRUCTURED THIN FILMS

  1. D. Nesheva, “Nanoparticle layers of CdSe in various multilayer structures”, J.Optoelectron. Adv. Mater. 3, 885-896 (2001).
  2. D. Nesheva, Z. Levi, H. Hofmeister, Z. Aneva and G. Bogachev, “CdSe nanocluster layers buried in amorphous GeS2 thin films”, Proc. 11th ISCMP, Varna 2000, “Materials for information technology in the new millennium”, Eds. J.M. Marshall, A.G. Petrov, A. Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud, Bookcraft, Bath, 2001, p.436-439.
  3. Z. Aneva and D. Nesheva, “Studies of thermally stimulated currents in Bi12TiO20  monocrystals”, Proc. 11th ISCMP, Varna 2000, “Materials for information technology in the new millennium”, Eds. J.M. Marshall, A.G. Petrov, A. Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud, Bookcraft, Bath, 2001, p. 324-327.
  4. D. Nesheva, H. Hofmeister, Z. Levi and Z. Aneva, “Nanoparticle layers of CdSe buried in oxide and chalcogenide thin film matrices”, Vacuum 65, 109-113 (2002).
  5. D. Nesheva, I. Bineva, Z. Levi, Z. Aneva, Ts. Merdzhanova and J.C. Pivin, “Composition, structure and annealing-induced phase separation in SiOx films produced by thermal evaporation of SiO in vacuum”, Vacuum 68, 1-9 (2002).
  6. I. Bineva, D. Nesheva, Z. Levi, Z. Aneva and H. Hofmeister, “Silicon nanoparticle growth in thermal SiOx thin films”, Proc. 3rd Workshop on Nanosci, and Nanotechnol., Sofia, Nov. 2001, Eds. E. Balabanova and I. Dragieva, Heron press, 2002, pp. 26-28.
  7. D. Nesheva, Z. Levi, I. Bineva  and H. Hofmeister, “Nanocrystalline layers of CdSe produced by means of a multilayer approach”, in Nanostructured Materials:Selected Synthesis Methods, Properties and Applications, Edited P. Knauth and J. Schoonman, Kluwer Academic Publishers, Boston (2002), pp. 115 – 125.
  8. D. Nesheva, C. Raptis, А. Perakis, I. Bineva, Z. Aneva, Z. Levi, S. Alexandrova, H. Hofmeister, “Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films”, J.Appl.Phys. 92, 4678-4683 (2002).
  9. V.M.N. Passaro, M.N. Armenise, D. Nesheva, I.T. Savatinova and E.Y.B. Pin, “LiNbO3 optical waveguides formed in a new proton source”, J. Lightwave Technology 20, 71-77 (2002).
  10. I.Bineva, D.Nesheva, Z.Aneva, Z.Levi, C.Raptis, H.Hofmeister, S.Stavrev, “Effects of annealing atmosphere and substrate on the photoluminescence and Raman scattering from Si nanocrystals in SiO2 matrix”, J. Material Sci.:Materials for Electronics 14, 799, (2003).
  11. S. Reynolds, C. Main, I. Zrinscak, Z. Aneva and D. Nesheva, “A study of electronic defects in hydrogenated amorphous silicon prepared by the expanding thermal plasma technique”, Mat. Res. Soc. Symp. Proc. 762, A19.14.1, (2003).
  12. I. Bineva, D. Nesheva, M. Sendova-Vassileva, Z. Aneva and Z. Levi, “Annealing behaviour of photoluminescence from a-SiOx thin films”, Nanoscience and Nanotechnology 3, 91 (2003). (Proc. 4th Workshop on Nanosci. and Nanotechnol., Sofia, November 2002, Eds. E. Balabanova and I. Dragieva, Heron press).
  13. R. Kotsilkova, E. Krusteva, D. Nesheva, T. Djunova, S. Stavrev, “Carbon nanoparticles in polymer: rheological properties and conductivity”, Nanoscience and Nanotechnology 3, 169 (2003). (Proc. 4th Workshop on Nanosci. and Nanotechnol., Sofia, November 2002, Eds. E. Balabanova and I. Dragieva, Heron press).
  14. R. Kotsilkova, D. Nesheva, I. Nedkov, E. Krusteva, S. Stavrev, “A study on the rheological, electrical and microwave properties of polymers with nanosized carbon particles”, Journal of Applied Polymer Science 92, 2220-2227 (2004).
  15. C. Raptis, D. Nesheva, Y.C. Boulmetis, Z. Levi, Z. Aneva, “Exciton related resonance Raman scattering from CdSe quantum dots in an amorphous GeS2 thin film matrix”, J. Phys. Condens. Matter. 16, 8221-8232 (2004).
  16. Z. Levi, “Photobleaching in GeS2 thin films doped with CdSe nanocrystals”, Nanoscience and Nanotechnology, Proc. 5th Workshop on Nanosci. and Nanotechnol., Sofia, November 2003, Eds. E. Balabanova and I. Dragieva, Heron press 4, 2004 р. 69-72.
  17. I. Bineva, D. Nesheva, Z. Aneva, H. Hofmeister, “Carrier transport mechanism in SiO2 thin films containing Si nanocrystals”, Nanoscience and Nanotechnology, Proc. 5th Workshop on Nanosci. and Nanotechnol., Sofia, November 2003, Eds. E. Balabanova and I. Dragieva, Heron press, 4, 2004, р. 62-65.
  18. D. Nesheva, “Nanoparticle Layers in Multilayers”, in Encyclopedia of Nanoscience and Nanotechnology, Edited by H.S. Nalwa, American Scientific Publishers, 2004, volume 7, pp.105-123.
  19. D. Nesheva, S. Reynolds, C. Main, Z. Aneva and Z. Levi, “Defect states in CdSe nanocrystalline layers”, Phys. stat. solidi (a) 202, No. 6, 1081–1087 (2005).
  20. D. Nesheva, “Raman scattering from semiconductor nanoparticles and superlattices”, J.Optoelectron. Adv. Mater. 7, No. 1, 185-192 (2005).
  21. Z. Aneva, D. Nesheva, “Recombination of photoexcited carriers in Bi12TiO20 monocrystals”, J.Optoelectron. Adv. Mater. 7, No. 1, 513 – 516 (2005).
  22. D. Nesheva, S. Reynolds, Z. Aneva, C. Main, Z. Levi, “Effects of thermal annealing and long-term ageing on electronic defects in CdSe thin films”, J.Optoelectron. Adv. Mater. 7, No. 1, 517-520 (2005).
  23. D. Nesheva, Z. Levi, Z. Aneva, “Size effects and lattice disorder in GeS2/CdSe nanostructures”, J.Optoelectron. Adv. Mater. 7, 1837 – 1846 (2005).
  24. Z. Aneva, D. Nesheva, C. Main, S. Reynolds, “Electronic defects in CdSe nanocrystals embedded in GeS2 amorphous matrix”, J.Optoelectron. Adv. Mater. 7, 1377 – 1382 (2005).
  25. D. Nesheva, I. Bineva, Z. Aneva, H. Hofmeister, “Hopping transport of dark and photogenerated carriers in Si rich SiO2 thin films”, in "Progress in Materials Science Research", 2005, Edited by F. Columbus, Nova Science Publishers, Inc., p.27.
  26. D. Nesheva, “Raman scattering from low-dimensional semiconductors, in nanostructured and advanced Materials”, NATO Science Series, Mathematics, Physics and Chemistry, Editors: A. Vaseashta, D. Dimova-Malinovska and J.M. Marshall, Springer, vol.204, 317-322 (2005).
  27. L. Pramatarova, E. Pecheva, D. Nesheva, Z. Aneva, A. L. Toth, E. Horvath, F. Riesz, “Hydroxyapatite growth on glass/CdSe/SiOx nanostructures”, Solid State Phenomena, 106 (2005) 123-126, From nanopowders to functional materials, ed. by R. Piticescu, W. Lojkowski and J. Blizzard.
  28. L. Pramatarova, E. Pecheva, D. Nesheva, Z. Aneva, A. L. Toth, E. Horvath, “Nanostructured CdSe in SiOx thin films as model for induction of bone like hydroxyapatite”, Semiconductor nanocrystals, vol.2 (2005) 387-390, Proc. 1st International Workshop on Semiconductor Nanocrystals, SEMINANO 2005, 10-12 September 2005, Budapest, Hungary.
  29. D. Nesheva, Y.C. Boulmetis, C. Raptis, “Application of resonant Raman scattering for determination of CdSe nanocrystal size”, Nanoscience and Nanotechnology 5, 98-101 (2005). (Proc. 5th Workshop on Nanosci. and Nanotechnol., Sofia, November 2004, Eds. E. Balabanova, I. Dragieva, Heron press).
  30. D. Nesheva, Y.C. Boulmetis, C. Raptis, “Application of resonant Raman scattering for determination of CdSe nanocrystal size”, Nanoscience and Nanotechnology 5, 94-97 (2005).



 

DISORDERED MATERIALS - CHALCOGENIDE GLASSES AND THIN FILMS

  1. O.I. Shpotyuk, R.Ya. Golovchak, A.P. Kovalskiy, M. M. Vakiv, V. D. Pamukchieva, D. D. Arsova, E. R. Skordeva, “Radiation optical effects in As2S3-GeS2 semiconducting glasses”, Phys. Chem. Glasses 42, 95-8 (2001).
  2. E. Skordeva, “Photoelectret properties and high-field polarization in chalcogenide glasses and thin films”, J.Optoelectron. Adv. Mater. 3, 437-443 (2001).
  3. M. Klebanov, V. Lyubin, D. Arsova. E. Vateva and V. Pamukchieva, “Photoinduced anisotropy in photobleaching Ge-As-S thin films”, Physica B 298, 399-404 (2001).
  4. E. Skordeva, D. Arsova, Z. Aneva, N. Vuchkov, D. Astadjov, “Laser induced photodarkening and photobleaching in Ge-As-S thin films”, Proc. SPIE 4397, 348-352 (2001).
  5. O.I. Shpotyuk, T. Kavetskiy, A.P. Kovalskiy, V. Pamukchieva, “Gamma-irradiation effect on the optical properties of GexSb40-xS60 chalcogenide glasses”, Proc. SPIE 4415, 278-283 (2001).
  6. O.I. Shpotyuk, T. Kavetskiy, A.P. Kovalskiy, V. Pamukchieva, “IR optical properties of Sb2S3-GeS2 (Ge2S3) chalcogenide glasses and effect of gamma-irradiation”, Proc. SPIE 4415, 272-277 (2001).
  7. Z.G. Ivanova, V. Pamukchieva, M. Vlcek, “On the structural phase transformations in GexSb40-xSe60 glasses”, J. Non-Cryst. Solids 293/295, 580-585 (2001).
  8. P.Petkov, Z.G. Ivanova, V.S. Vassilev, “D.c. conductivity of amorphous (GeS3)100-xGax thin films”, Thin Solid Films 396, 209-212 (2001).
  9. V.S. Vassilev, V.A. Vachkov, Z.G. Ivanova, “Phase equilibria in the Ag4SSe-InSb system”, J. Mat. Sci. Lett. 20, 1451-1453 (2001).
  10. V.S. Vassilev, V.A. Vachkov, Z.G. Ivanova, “Phase equilibria in the Ag4SSe-ZnTe system”, J. Mat. Sci. 12, 161-164 (2001).
  11. Z.G. Ivanova, P. Petkov, V.S. Vassilev, “Optical and electrical properties of amorphous (GeS2)100-xGax thin films”, J.Optoelectron. Adv. Mater. 3, 481-484 (2001).
  12. Liudi Jiana, A.G. Fitzgerald, M.J. Rose, K. Christova, A. Manov, V. Pamukchieva, “X-ray photoelectron spectroscopy studies of GexSb40-xS60 films”, J.Optoelectron. Adv. Mater. 3, 841-846 (2001).
  13. О.Й. Шпотюк, Т.С. Кавецький, А.П. Ковальський, Р.В. Луцiів, В. Памукчіieва, “Радіаційiно-iіндукованiі змiіни оптичного пропусканнiя склоподібних напiівпровідникiів системи GexSb40-xS60”, Укр.фiіз.ж. 46, 495-498 (2001).
  14. O.I. Shpotyuk, T. Kavetskiy, J. Filipecki, A. Kovalskiy, V. Pamukchieva, “Radiation-induced optical effects in Sb2S3-GeS2  chalcogenide glasses”, Prace Naukowe Chemia 5, 189-197 (2001).
  15. E. Vateva, E. Skordeva, D. Arsova, V. Pamukchieva, M. Klebanov and V. Lyubin, “Photoinduced anisotropy in amorphous Ge‑As‑Se films”, Proc. 11th ISCMP, Varna 2000, “Materials for information technology in the new millenium", Eds.J.M. Marshall, A.G. Petrov, A.Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud, Bookcraft, Bath, 2001, p.300-303.
  16. E. Vateva, E. Skordeva, “Nanoscale arrangement in the GexAs(Sb)40-xS60 Systems”, review paper, J.Optoelectron. Adv. Mater. 4, No 1, pp. 3-12 (2002),.
  17. V.S. Vassilev, S.V. Boycheva, Z.G. Ivanova, “A Zn(II) ion-selective electrode based on chalcogenide As2Se3-Sb2Se3-ZnSe and GeSe2-ZnSe-ZnTe glasses’’, J. Appl. Electrochem. 32, 281-285 (2002).
  18. V.S. Vassilev, Z.G. Ivanova, E. Dospejska, S.V. Boycheva, “Multicomponent GeSe2-CdI2-TeO2(Bi2O3) systems: glass formation and properties”, J. Phys. Chem. Solids 63, 815-819 (2002).
  19. O.I. Shpotyuk, R. Golovchak, A. Kovalskiy, V. Pamukchieva, E. Skordeva and D. Arsova, “On the mechanism of radiation-induced optical effects in vitreous As2S3-GeS2”, Ukr. J. Phys. Optics 3, 134-143 (2002).
  20. Christova K, Manov A., Pamukchieva V., Fitzgerald A., Jiang L.,“Stress-free phase in films of GeSbS family”, Proc. 13th International Symposium on non-oxide glasses and new optical glasses, Sept. 9-13, Pardubice, Czech Republic, Extended abstracts, v. 2, 2002, 447-450.
  21. V.O Balitska., R. Ya Golovchak., A.P Kovalskiy, Е. Skordeva, О. I. Shpotyuk “The effect of thermoradiation influences on optical properties of As-Ge-S glasses”, Proc. 13th International Symposium on Non-Oxide Glasses and New Optical Glasses, Ext. Abstracts v. 1, 2002, 370-373.
  22. V.S. Vassilev, Z.G. Ivanova, E.S. Dospeiska, P. Petkov, “Multicomponent GeSe2-based systems: glass formation and properties”, Proc. 13th Intern. Symp. on Non-Oxide Glasses and New Optical Glasses, Pardubice, v. 1, 2002, p. 171-174.
  23. Z.G. Ivanova, E. Cernoskova, Z. Cernosek, V.S. Vassilev, “Optical properties of (GeS2)80-x(Ga2S3)x:Er2S3 glasses”, Proc. 13th Intern. Symp. on Non-Oxide Glasses and New Optical Glasses, Pardubice, v. 2, 2002, p. 541-545.
  24. В. Памукчиева, Е. Скордева, Д. Арсова, В. Маслюк, “Электронно-стимулированные изменения оптических свойств аморфных пленок Ge-As(Sb)-S”, Сб. трудов III Межд. конференции “Аморфные и микрокристаллические полупроводники”, Изд. СПбГПУ, 2002, стр. 248-249.
  25. T. Tsvetkova, S. Balabanov, E. Skordeva, S. Kitova, J. Zuk, J. Sielanco, “Ion Implantation Surface Morphology Changes in Thin As3Se2 Films”, Materials of IVth Intern. Symposium on “Ion Implantation and Other Application of Ions and Electrons”– 2002.
  26. D. Arsova, V. Pamukchieva, E. Vateva, E. Skordeva, “Photo- and thermo-induced bandgap and volume changes in Ge-based chalcogenide films”, J. Mat. Sci.: Materials in Electronics 14, 835-836 (2003).
  27. D. Platikanova, E. Skordeva, D. Arsova, “Short- and medium-range order in thin As2S1.5Se1.5-Gex films: irreversible photostructural changes”, J. Mat. Sci.: Materials in Electronics 14, 833-834 (2003).
  28. E. Vateva, D. Arsova, E. Skordeva, V. Pamukchieva, “Irreversible and reversible changes in band gap and volume of chalcogenide films”, J. Non-Cryst. Sol. 326&327, 243-247 (2003).
  29. V.Pamukchieva, A.Szekeres, K.Todorova, “Optical study of GexSb20-xTe80 chalcogenide films”, J. Mat. Sci.: Materials in Electronics 14, 837-838 (2003).
  30. K.Christova, A.Manov, V.Pamukchieva, A.G.Fitzerald, L.Jiang, “Mechanical stress study of amorphous GexSb40-xS60 film”, J. Non-Cryst. Sol. 325, 142-149 (2003).
  31. Z.G. Ivanova, E. Cernoskova, V.S. Vassilev, S.V. Boycheva, “Thermomechanical and structural characterization of GeSe2-Sb2Se3-ZnSe glasses”, Materials Letters 57, 1025-1028 (2003).
  32. Z.G. Ivanova, V.S. Vassilev, E. Cernoskova, Z. Cernosek, “Physicochemical, structural and luminescence properties of Er-doped Ge-S-Ga glasses”, J. Phys. Chem. Solids 64, 107-110 (2003).
  33. Z.G. Ivanova, Z. Aneva, Z. Cernosek, E. Cernoskova, V.S. Vassilev, “Influence of Ga on the luminescence efficiency of Er-doped Ge-S-Ga glasses”, J. Mater. Sci. 14, 761-762 (2003).
  34. V. Balitska, R. Golovchak, A. Kovalskiy, E. Skordeva and O. I. Shpotyuk, “Effect of Co60 g-irradiation on the optical properties of As–Ge–S glasses”, J. of Non-Cryst. Solids 326-327, 130-134 (2003).
  35. T. Tsvetkova, S. Balabanov, E. Skordeva, S. Kitova, J. Sielanko, D. Maszka, J. Zuk, ”Ion implantation induced surface morphology changes in As3Se2 films”, Vacuum 69, 471-475 (2003).
  36. V.S. Vassilev, Z.G. Ivanova, “Reversible a«b phase transition in the narrow-gap semiconducting Ag4SSe compound”, Bulletin of the Chemists and Technologists of Macedonia, 22, No 1, 21-24 (2003).
  37. E. Skordeva, ”Photoinduced changes in amorphous GexAs(Sb)40-xS60 films”, in the Homage Book dedicated to the Academician, Professor Andrei Andriesh and Prof. Serghei Shutov with their 70’s anniversaries “Contributions to Non-Crystalline Semiconductor Physics and to Optoelectronics”, eds. Arthur Buzdugan&Mihai Iovu, Int. Association of Academies of Sciences, Chisinau, pp. 40-49 ( 2003) .
  38. В.Т. Маслюк, Е. Скордева, П.П. Пуга, Д. Арсова, В. Памукчиева, “Концентрационная зависимость радиационно-стимулированных изменений оптических свойств пленок GexAs40-xS60”, ФTT 46, 1393-1397 (2004).
  39. W. Pamukchieva, A. Szekeres, K. Todorova, “Photo-induced changes of optical constants of chalcogenide Ge19Sb1Te80 films”, Proceedings of SPIE 5581, 608-613 (2004).
  40. Y. C. Boulmetis, A. Perakis, C. Raptis, D. Arsova, E. Vateva, D. Nesheva, E. Skordeva, “Compositional and temperature dependence of the low-frequency Raman scatering in Ge-As-S glasses”, J. Non-Cryst. Sol. 347, 187-196 (2004).
  41. T. Tsvetkova, S. Balabanov, E. Skordeva, S. Kitova, J. Sielanko, D. Maszka, J. Zuk, “Surface morphology effects of post-implantation annealing in thin amorphous films of the As-Se system”, Vacuum 72, 143-147 (2004).
  42. D. Arsova, Y. C. Boulmetis, C. Raptis, V. Pamukchieva, E. Skordeva, “Boson peak in the Raman scattering spectra of AsxS1-x glasses”, Сб. трудов IV Межд. конференции, Санкт Петербург 2004, “Аморфньiе и микрокристаллические полупроводники”, Изд. СПбГПУ, 2004, стр. 272-273.
  43. Л. Казакова, К. Цэндин, М. Тагирджанов, В. Памукчиева, Е. Скордева, Д. Арсова, “Фотоструктурные превращения в пленках халькогенидных стеклообразных полупроводников систем Se-As и Ge-Sb-Te”, Сб. трудов IV Межд. конференции, Санкт Петербург 2004, “Аморфные и микрокристаллические полупроводники”, Изд. СПбГПУ, 2004, стр. 254.
  44. D. Platikanova, D. Arsova, E. Skordeva, “Photo- and thermoinduced changes in As2S1.5Se1.5Gex”, J.Optoelectron. Adv. Mater. 7, 337-340 (2005).
  45. E. Skordeva, P.E. Lippens, J.C. Jumas, J. Olivier-Fourcade and V. Pamukchieva, “Mössbauer study of the degree of disorder in amorphous Ge-Sb-S”, J.Optoelectron. Adv. Mater. 7, 565-568 (2005).
  46. D. Gonbeau, V. Pamukchieva, R. Dedryvere, E. Skordeva and D. Arsova, “Photoinduced changes in the valence band states of GeXAs40-XS60 thin films”, J.Optoelectron. Adv. Mater. 7, 341-344 (2005).
  47. E. Vateva, B. Terziyska, H. Misiorek, A. Jezowski, D. Arsova, “Low-temperature thermal properties of Ge-As-S glasses”, J.Optoelectron. Adv. Mater. 7, 357-360 (2005).
  48. B. Terziyska, A. Czopnik, E. Vateva, D. Arsova and R. Czopnik, “Low-temperature specific heat of Ge-As-S glasses”, Phys. Rev. Lett. 85, 145-150 (2005).
  49. B. Terziyska, H. Misiorek, E. Vateva, A. Jezowski, D. Arsova, “Low-temperature thermal conductivity of GexAs40-xS60 glasses”, Solid State Communications 134, 349-353 (2005).
  50. V. Pamukchieva, E. Skordeva, D. Arsova, M.-F. Guimon, D. Gonbeau, “Changes in the electronic structure of Ge-As-S thin films after illumination”, J.Optoelectron. Adv. Mater. 7, 1265-1270 (2005).
  51. J. C. Jumas, F. Robert, L. Aldon, E. Skordeva, “Mossbauer spectroscopy as a powerful tool to study local electronic structure (Invited lecture),13th ISCMP "Advances in the Physics and Technology of Solids and Soft Condensed Matter" 2004, J.Optoelectron. Adv. Mater. 7, 177-184 (2005).
  52. D. Arsova, E. Skordeva, V. Pamukchieva, E. Vateva, “Photoinduced changes in Ge-As-S thin films with various network rigidities”, J.Optoelectron. Adv. Mater. 7, 1259-1264 (2005).
  53. Д. Арсова, Я. Булметис, К. Раптис, В. Памукчиева, Е. Скордева, (a) “Бозонный пик в спектрах комбинационного рассеяния стекол AsxS1-x”, Физика и техника полупроводников 39, 994-996 (2005), (b) “The Boson peak in Raman spectra of AsxS1-x glasses”, Semicond. (ru) 39, 995-997 (2005).
  54. Y. C. Boulmetis, C. Raptis, D. Arsova, “Structure and dynamics of Ge-As-S chalcogenide glasses monitored by low-frequency Raman scattering” (Invited lecture), 13th Symp. “Irradiation Induced Phenomena in Chalcogenide, Oxide and Organic Thin Films”, J.Optoelectron. Adv. Mater. 7, 1209-1216 (2005).
  55. E. Skordeva, M. Womes, P.E. Lippens, J.C. Jumas, D. Arsova, “Disorder in GexAs40-xS60 glasses and films: an EXAFS study”, J.Optoelectron. Adv. Mater. 7, 1869-1874(2005).
  56. V.Pamukchieva, A. Szekeres, “Influence of illumination on the optical bandgap energy value of GexSb20-xTe80 films”, J.Optoelectron. Adv. Mater. 7, 1277-1280 ( 2005).
  57. Z.G. Ivanova, R. Ganesan, Z. Aneva, E.S.R. Gopal, “Influence of temperature on the photoluminescence efficiency of chalcogenide GeS2-Ga2S3-Er2S3 glasses”, Mater. Sci. Eng. B 122, 152-155 (2005).
  58. Z.G. Ivanova, R. Ganesan, K.V. Adarsh, V.S. Vassilev, Z. Aneva, Z. Cernosek, E.S.R. Gopal, “Low-temperature luminescence quenching and local ordering study of Er-doped Ge-S-Ga glasses”, J.Optoelectron. Adv. Mater. 7, 1 345-348 (2005).
  59. Z.G. Ivanova, K. Koughia, Z. Aneva, D. Tonchev, V.S. Vassilev and S.O. Kasap, “Photoluminescence of Er3+ ions in (GeS2)80(Ga2S3)20 glasses”, J.Optoelectron. Adv. Mater. 7, 349-352 (2005).
  60. Z.G. Ivanova, K. Koughia, D. Tonchev, J.C. Pivin, S.O. Kasap, “Photoluminescence in Er-implanted amorphous Ge-S-Ga thin films”, J.Optoelectron. Adv. Mater. 7, 1271-1276 (2005).
  61. Z.G. Ivanova, D. Tonchev, R. Ganesan, E.S.R. Gopal, S.O. Kasap, “Temperature dependent photoluminescence in Er-doped Ge-S-Ga glasses”, J.Optoelectron. Adv. Mater. 7, 1863-1867 (2005).
  62. V.S. Vassilev, Z.G. Ivanova, L. Aljihmani, Е. Cernoskova, Z. Cernosek, “Glass-forming regions, properties and structure of the chalcogenide GeSe2-As2Se3-SnTe (Ag4SSe) systems”, Mater. Lett. 59, 85-87 (2005).
  63. . V. Pamukchieva, D. Gonbeau, M.-F.Guimon, E. Skordeva, R. Dedryvere, D. Arsova “XPS study of photo-and thermally induced changes in amorphous GexAs40-xS60“, Physica B 371, 302-308 (2006).



 

AC ELECTROLUMINESCENT STRUCTURES AND DISPLAYS

  1. K.M. Kolentsov, “Electroluminescence in organic materials”, Ann. Univ. Sofia, Department of Chemistry, 92-94, 239-241 (2001)
  2. K. Kolentsov, L. Yourukova, A. Rachkova and N. Tsvetanov, “Influence of diffuse-reflecting coatings in the initial brightness of AC EL structures”, Proc. 11th ISCMP, Varna 2000, “Materials for information technology in the new Мillennium", Eds.J.M. Marshall, A.G. Petrov, A.Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud, Bookcraft, Bath, 2001, p.276-279.
  3. K. Kolentsov, L. Yourukova and T. Racheva, “Effect of the transparent electrode parameters on the brightness of the AC EL display structures”, Proc. 11th ISCMP, Varna 2000, “Materials for information technology in the new Мillennium", Eds.J.M. Marshall, A.G. Petrov, A.Vavrek, D. Nesheva, D. Dimova-Malinovska, J.M. Maud, Bookcraft, Bath, 2001, p.280-283
  4. K. Kolentsov and L. Yourukova, “Hibrid digital EL display setup”, Proc. of the 12th Int. Symp. on Electrical Apparatus and Technologies, Plovdiv, Bulgaria, 1, 172-179 (2001).
  5. K. Kolentsov and L. Yourukova, Possibilities of educational polichromic electroluminescence display, Proc. National Seminar “Colour knowledge in education”, Аnubis, Sofia, 48-51, 2001.
  6. L.S. Yourukova, K.M. Kolentsov, T.I. Kehlibarov, “New advances in brightness and color chacteristics of hybrid electroluminescent display structures”, Proc. SPIE 4421,.(2002),371-374.
  7. L. Yourukova, K. Kolentsov, K. Kreshov, I. Stoianov, “Dependence of -irradiation on the brightness characteristics of electroluminescence displays” Proc. XXII colloquium “Physics and ecology”, Sofia 2002, pp.75-80 (in Bulgarian).
  8. K. Kolentsov, A. Tasev, “Hybrid electroluminescent display”, Proc. National Conf. “Electronics 2002”, Sofia, pp. 134-139 (in Bulgarian).
  9. K.Kolentsov, M. Rassovska, G. Dobrikov, “Ecrans electroluminescents avec des couches de polymeres conjugues”, Proc. Int. Symposium on Basic technologies for E-business’2002, Bulgaria, p. 251-255, 2002.
  10. M. Rassovska, K.Kolentsov, G. Dobrikov, “Application des polymeres conjugues dans les ecrans electroluminescents”, Proc. Int. Symposium on Basic technologies for E-business’2002, Bulgaria, p. 319-322, 2002.
  11. К. Kolentsov, L. Yurukova, Т. Кеhlibarov, А. Zheliazkova, “Оrganic color displays and possibilities for their application in textile industry”, Tekstil i obleklo, 8, 11-12 (2003), in Bulgarian. ,
  12. L. Yourukova, K. Kolentsov, E. Radeva, “Effect of a second protective layer in AC EL display structures on their characteristics”, Vacuum 76, 199-202 (2004).
  13. K. Kolentsov, L. Yorukova, E. Radeva, D. Zhechev, E. Dimova, “Inorganic electroluminescent light sources with an organic protecting layer”, in: Proc. of the 10th International Symposium on the Science and Technology of Light Sources,”Light Sources’ 2004”,Toulouse, France, 18-22 May 2004, р. 365-366.
  14. E. Radeva, K. Kolentsov, L. Yorukova, D. Zhechev, E. Damianova-Arnaudova, P. Zubov, “Photoluminescent spectra of polymer layers, containing silicon”, Proc IV International Scientific Coference “Chemistry of Solid State and :Modern Micro- and Nanotechnologies, Kislovodsk, Russia, 19-24 September 2004, Publishing House of North-Kavkas State Technical University, Stavropol, Russia, 2004, 420-425 (in Russian).
  15. K. Kolentsov, L. Yorukova, S. Balabanov, H. Yossifov, Electric and dielectric properties of organic and inorganic properties, Proc. Of National Conference With International Participation “ELECTRONICS’ 2004 “, Sofia, Bulgaria, May 21-22, 2004, General Sponsor Festo Production EOOD, 2004, 39-42 (in Bulgarian).
  16. K. Kolentsov, Z. Uzunov, “Characteristics of inorganic electroluminescent elements on hard and flisible substrate”, Proc. of National Conference with International Participation “ELECTRONICS’ 2004“, Sofia, Bulgaria, May 21-22 2004, General Sponsor Festo Production EOOD, 2004, 43-49 (in Bulgarian).
  17. K. Kolentsov, L. Yorukova, K. Ivanova, Impedance and brightness characteristics of AC electroluminescent displays structures, Proc. of National Conference with International Participation “ELECTRONICS’ 2004“, Sofia, Bulgaria, May 21-22 2004, General sponsor Festo Production EOOD, 2004, 50-56 (in Bulgarian).
  18. K. Kolentsov, L. Yourukova, E. Radeva and T. Kechlibarov, “New Hybrid AC EL Displays – Preparation and Application”, Proc. of 12th National Conference with International Participation “Light’2004”, Varna, Bulgaria, 15-17 June 2004, National Committee on Illumination, 2004, p. 156-158.
  19. К. Кolentsov, L. Yourukova, A. Zheliaskova, A. Rachkova, “Some properties of doped SnO2  thin films used in EL and LC display structures”, Bulg. J. Phys. 31, 126-130 ( 2004).
  20. L.Yourukova, K.Kolentsov, A. Zheliaskova, “Colour characteristics of AC HEL structures with various protective layers”, Bulg. J. Phys. 31, 139-142 (2005).
  21. К. Кolentsov, Discovering and inventing activities of the Bulgarian physics in XX century”, Proc. Sci. Seminar “Development and spreading of physical knowledge in Bulgaria”, Plovdiv, 2005, p.54.
  22. S. Balabanov, K. Kolentsov, L. Yourukova, A.Rachkova, Optical Properties of Fullerenes in Xylene and Polyepoxy Oligomer Media, Annual de L’Universite de Sofia “St. Kliment Ohridski”, Faculte de Chimie, 98-99, 215-221 (2006).

      Last update February 2007

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