Tel.: +3592 9795000 226

Fax: +35929753632

E-mail: nesheva@issp.bas.bg

 

 

 

Diana Nesheva graduated from Sofia University, Bulgaria in 1976. In 1982 she obtained her PhD degree on "Creation and investigation of some photoinduced phenomena in CdS" from the Institute of Solid State Physics of Bulgarian Academy of Sciences. Afterwards she carried out studies on inorganic amorphous and crystalline materials such as chalcogenide glasses and thin films, a-CdS, a-Si:H and a-Si1-xGex:H thin films, photorefractive Bi12SiO20 crystals etc. She has great experience in vacuum techniques for preparation of semiconductor thin films as well as in electrical, photoelectrical and optical characterisation of crystalline and amorphous semiconductors.

Subjects of her recent interest are two-component systems including low-dimensional inorganic semiconductor materials (multilayers and superlattices from amorphous and nanocrystalline materials as well as semiconductor nanoparticles embedded in various matrices). Studies on these systems are concentrated on size-induced effects in the electron and phonon subsystems, structure and structural stability, transport mechanisms etc. X-ray diffraction, high-resolution electron microscopy, Raman scattering, photoluminescence, absorption and electrical measurements are carried out.

Very recently the studies on the nanostructured thin films have been directed to development of gas-sensors. The research in this field has been partially supported under a NATO linkage grant (CLG 980656) entitled “Optoelectronic properties of semiconductor thin films for gas sensor applications”.

Diana Nesheva is author and co-author of 110 original papers, most of which are published in representative International Journals such as Phys.Rev.B, J. Appl. Phys., Philosophical Magazine B, J. Non-Crystalline Solids etc. She has been supervisor of 4 undergraduated and 3 postgraduated students.

She is head of the laboratory "Photoelectrical and optical phenomena in wide gap semiconductors"and of the department “Nanophysics” in the Institute of Solid State Physics of BAS. Also, she is a member of the Scientific Council of the Institute.

The staff of laboratory is able to fabricate nanostructured thin films including semiconductor materials with physical evaporation in high vacuum. Set-ups for electrical, photoelectical and optical measurements are also available in the laboratory.

Co-operative studies on low-dimensional system have been carried out with:

·              Dundee University, Dundee, Scotland;

·              Institute of Physics, Carl von Ossietzky University Oldenburg, D-26111 Oldenburg, Germany;

·              National Polytechnical University of Athens, Greece;

·              Max-Plank Institute, Halle, Germany,

·              Institute of Physics, Center for Solid State Physics and New materials, Belgrade, Serbia&Montenegro.

 

 

 

More important recent publications:

 

  1.  D. Nesheva, “Nanocrystalline and amorphous thin film systems including low-dimensional chalcogenide materials”, in Handbook of Surfaces and Interfaces of materials, Ed. H.S. Nalwa, Academic Press, 2001, volume 3, chapter 6, 239-279.
  2. D. Nesheva, Z. Levi, I. Bineva and H. Hofmeister ,“Nanocrystalline layers of CdSe produced by means of a multilayer approach”, in Nanostructured Materials:Selected Synthesis Methods, Properties and Applications, Edited P. Knauth and J. Schoonman, Kluwer Academic Publishers, Boston (2002), pages 115 – 125.
  3.  D. Nesheva, C. Raptis, À. Perakis, I. Bineva, Z. Aneva, Z. Levi, S. Alexandrova, H. Hofmeister, Raman scattering and photoluminescence from Si nanoparticles in annealed SiOx thin films, J. Appl. Phys, 92, 4678-4683 (2002).
  4. D. Nesheva, Z. Levi, Z. Aneva, I. Zrinscak, C. Main, and S. Reynolds, ”Size-dependent absorption and defect states in CdSe nanocrystals in various multilayer structures”, J. Nanoscience & Nanotechnology, 3, 645 (2002).
  5. D. Nesheva, I. Bineva, Z. Levi, Z. Aneva, Ts. Merdzhanova and J.C. Pivin, “Composition, structure and annealing-induced phase separation in SiOx films produced by thermal evaporation of SiO in vacuum”, Vacuum, 68, 1-9 (2003).
6.      I.Bineva, D.Nesheva, Z.Aneva, Z.Levi, C.Raptis, H.Hofmeister, S.Stavrev, “Effects of annealing atmosphere and substrate on the photoluminescence and Raman scattering from Si nanocrystals in SiO2 matrix”, J. Material Sci.:Materials for Electronics, 14, 799, (2003).
  1. D. Nesheva,Nanoparticle Layers in Multilayers”, in “Encyclopedia of Nanoscience and Nanotechnology”, Edited by H.S. Nalwa, American Scientific Publishers, volume 7, pp.105-123 (2004).
  2. C. Raptis, D. Nesheva, Y.C. Boulmetis, Z. Levi, Z. Aneva, “Exciton related resonance Raman scattering from CdSe quantum dots in an amorphous GeS2 thin film matrix”, J. Phys.: Condens. Matter, 16, 8221 (2004).
  3. R. Kotsilkova, D. Nesheva, I. Nedkov, E. Krusteva, S. Stavrev, "A Study on the Rheological, Electrical and Microwave Properties of Polymers with Nanosized Carbon Particles", Journal of Applied Polymer Science, 92, 2220-2227 (2004).
  4. D. Nesheva, S. Reynolds, C. Main, Z. Aneva and Z. Levi, Defect states in CdSe nanocrystalline layers, phys. stat. solidi (a), 202, No. 6, 1081 (2005).
  5. Z. Aneva, D. Nesheva, C. Main, S. Reynolds, Electronic defects in CdSe nanocrystals embedded in GeS2 amorphous matrix, Journal of Optoelectronics and Advanced Materials, 7, 1377 – 1382 (2005).
  6. L. Pramatarova, E. Pecheva, D. Nesheva, Z. Aneva, A. L. Toth, E. Horvath, F. Riesz, Hydroxyapatite growth on glass/CdSe/SiOx nanostructures, Solid State Phenomena, 106, 123 (2005).
  7. G. Manolis, D. Papadimitriou, D. Nesheva, Photoreflectance study of multilayer structures of nanocrystalline CdSe in insulator matrix, Thin Solid Films, 495 (2006) 338 – 342.
  8. I. Bineva, D. Nesheva, M. Šćepanović, M. Grujić-Brojčin, Z. V. Popović, Z. Levi, “Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength”, J. Luminescence, in press (2006).
  9. D. Nesheva, “Carrier Transport and Gap States in Semiconductor Nanostructures, in Handbook of Semiconductor Nanostructures and Devices”, Edited by A.A. Balandin, 2006, American Scientific Publishers, volume 1, chapter 10, pages 453-497.
  10. D. Nesheva, Z. Aneva, S. Reynolds, C. Main and A. G. Fizgerald, Preparation of micro - and nanocrystalline CdSe and CdS thin films suitable for sensor applications, Journal of Optoelectronics and Advanced Materials, 8, (2006), in press.

Last update February 2007