Diana Nesheva
graduated from Sofia University, Bulgaria in 1976. In 1982 she obtained her PhD
degree on "Creation and investigation of some photoinduced phenomena in
CdS" from the Institute of Solid State Physics of Bulgarian Academy of
Sciences. Afterwards she carried out studies on inorganic amorphous and
crystalline materials such as chalcogenide glasses and thin films, a-CdS,
a-Si:H and a-Si1-xGex:H thin films, photorefractive Bi12SiO20
crystals etc. She has great experience in vacuum techniques for preparation of
semiconductor thin films as well as in electrical, photoelectrical and optical
characterisation of crystalline and amorphous semiconductors.
Subjects
of her recent interest are two-component systems including low-dimensional
inorganic semiconductor materials (multilayers and superlattices from amorphous
and nanocrystalline materials as well as semiconductor nanoparticles embedded
in various matrices). Studies on these systems are concentrated on size-induced
effects in the electron and phonon subsystems, structure and structural
stability, transport mechanisms etc. X-ray diffraction, high-resolution
electron microscopy, Raman scattering, photoluminescence, absorption and
electrical measurements are carried out.
Very
recently the studies on the nanostructured thin films have been directed to
development of gas-sensors. The research in this field has been partially
supported under a NATO linkage grant (CLG 980656) entitled “Optoelectronic
properties of semiconductor thin films for gas sensor applications”.
Diana Nesheva is author and co-author of 110 original papers, most of which
are published in representative International Journals such as Phys.Rev.B, J.
Appl. Phys., Philosophical Magazine B, J. Non-Crystalline Solids etc. She has
been supervisor of 4 undergraduated and 3 postgraduated students.
She is head of the laboratory "Photoelectrical and optical phenomena in
wide gap semiconductors"and of the department “Nanophysics” in the
Institute of Solid State Physics of BAS. Also, she is a member of the
Scientific Council of the Institute.
The staff of laboratory is able to fabricate nanostructured thin films
including semiconductor materials with physical evaporation in high vacuum.
Set-ups for electrical, photoelectical and optical measurements are also
available in the laboratory.
Co-operative
studies on low-dimensional system have been carried out with:
·
Dundee University, Dundee,
Scotland;
·
Institute of Physics, Carl von Ossietzky
University Oldenburg, D-26111 Oldenburg, Germany;
·
National Polytechnical University of Athens, Greece;
·
Max-Plank Institute, Halle, Germany,
·
Institute
of Physics, Center for Solid State
Physics and New materials, Belgrade, Serbia&Montenegro.
More
important recent publications:
- D.
Nesheva, “Nanocrystalline
and amorphous thin film systems including low-dimensional chalcogenide
materials”, in Handbook of Surfaces
and Interfaces of materials, Ed. H.S. Nalwa, Academic Press, 2001,
volume 3, chapter 6, 239-279.
- D. Nesheva, Z. Levi, I. Bineva
and H. Hofmeister ,“Nanocrystalline layers of CdSe produced by means
of a multilayer approach”, in Nanostructured Materials:Selected
Synthesis Methods, Properties and Applications, Edited P. Knauth and
J. Schoonman, Kluwer Academic Publishers, Boston (2002), pages 115 – 125.
- D. Nesheva, C. Raptis, À. Perakis, I. Bineva, Z.
Aneva, Z. Levi, S. Alexandrova, H. Hofmeister, Raman scattering and photoluminescence from Si nanoparticles in
annealed SiOx thin films, J. Appl. Phys, 92, 4678-4683 (2002).
- D. Nesheva, Z. Levi, Z. Aneva,
I. Zrinscak, C. Main, and S. Reynolds, ”Size-dependent absorption and defect states in CdSe nanocrystals in various
multilayer structures”, J.
Nanoscience & Nanotechnology, 3, 645 (2002).
- D.
Nesheva, I. Bineva,
Z. Levi, Z. Aneva, Ts. Merdzhanova and J.C. Pivin, “Composition,
structure and annealing-induced phase separation in SiOx films
produced by thermal evaporation of SiO in vacuum”, Vacuum, 68, 1-9
(2003).
6.
I.Bineva,
D.Nesheva, Z.Aneva, Z.Levi, C.Raptis, H.Hofmeister, S.Stavrev, “Effects
of annealing atmosphere and substrate on the photoluminescence and Raman
scattering from Si nanocrystals in SiO2 matrix”, J. Material
Sci.:Materials for Electronics, 14, 799, (2003).
- D. Nesheva, “Nanoparticle Layers in Multilayers”, in “Encyclopedia of
Nanoscience and Nanotechnology”, Edited
by H.S. Nalwa, American Scientific Publishers, volume 7,
pp.105-123 (2004).
- C. Raptis, D. Nesheva, Y.C. Boulmetis, Z.
Levi, Z. Aneva, “Exciton related resonance Raman scattering from CdSe
quantum dots in an amorphous GeS2 thin film matrix”, J. Phys.:
Condens. Matter, 16, 8221 (2004).
- R. Kotsilkova, D. Nesheva, I. Nedkov, E.
Krusteva, S. Stavrev, "A Study on the Rheological, Electrical and
Microwave Properties of Polymers with Nanosized Carbon Particles",
Journal of Applied Polymer Science, 92, 2220-2227 (2004).
- D.
Nesheva, S.
Reynolds, C. Main, Z. Aneva and Z. Levi, Defect states in CdSe
nanocrystalline layers, phys. stat. solidi (a), 202,
No. 6, 1081 (2005).
- Z. Aneva, D. Nesheva, C. Main, S. Reynolds,
Electronic defects in CdSe nanocrystals embedded in GeS2
amorphous matrix, Journal of Optoelectronics and Advanced Materials, 7,
1377 – 1382 (2005).
- L. Pramatarova, E. Pecheva, D. Nesheva, Z.
Aneva, A. L. Toth, E. Horvath, F. Riesz, Hydroxyapatite growth on glass/CdSe/SiOx nanostructures,
Solid State Phenomena, 106, 123 (2005).
- G. Manolis, D. Papadimitriou, D. Nesheva, Photoreflectance study of
multilayer structures of nanocrystalline CdSe in insulator matrix, Thin
Solid Films, 495 (2006) 338 – 342.
- I. Bineva, D. Nesheva, M. Šćepanović, M. Grujić-Brojčin, Z. V. Popović, Z. Levi, “Dependence of
photoluminescence from a-Si nanoparticles on the annealing time and
exciting wavelength”, J. Luminescence, in press (2006).
- D. Nesheva, “Carrier Transport and Gap States in Semiconductor
Nanostructures, in Handbook of
Semiconductor Nanostructures and Devices”, Edited by A.A. Balandin, 2006,
American Scientific Publishers, volume
1, chapter 10, pages 453-497.
- D. Nesheva,
Z. Aneva, S. Reynolds, C. Main and A. G. Fizgerald, Preparation of
micro - and nanocrystalline CdSe and CdS thin films suitable for
sensor applications, Journal of
Optoelectronics and Advanced Materials, 8, (2006), in press.
Last update February 2007